1 ELM34812AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient steady-state rja 62.5 c /w parameter symbol limit unit note drain-source voltage vds 20 v gate-source voltage vgs 12 v continuous drain current ta=25c id 7 a ta=70c 6 pulsed drain current idm 38 a 3 power dissipation ta=25c pd 2.0 w ta=70c 1.3 junction and storage temperature range tj, tstg -55 to 150 c ELM34812AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=20v ? id=7a ? rds(on) < 21m (vgs=4.5v) ? rds(on) < 35m (vgs=2.5v) dual n-channel mosfet s 1 d1 s 2 d2 g2 g1 4 - pin configuration circuit pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8 sop-8(top view)
2 ELM34812AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 20 v zero gate voltage drain current idss vds=16v, vgs= 0v 1 a vds=16v, vgs= 0v, tj=55c 10 gate-body leakage current igss vds=0v, vgs= 12v 100 na gate threshold voltage vgs(th) vds=vgs, id=250 a 0.5 0.8 1.2 v on state drain current id(on) vgs=4.5v, vds=5v 15 a 1 static drain-source on-resistance rds(on) vgs=4.5v, id= 7a 15 21 m 1 vgs =2. 5v, id =6 a 21 35 m forward transconductance gfs vds = 5v, id =7 a 37 s 1 diode forward voltage vsd if = 1a, vgs=0v 1.2 v 1 max.body-diode continuous current is 1.3 a pulsed current ism 2.5 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=10v, f=1mhz 1082 pf output capacitance coss 277 pf reverse transfer capacitance crss 130 pf switching parameters total gate charge qg vgs=4.5v, vds=10v, id=7a 12 19 nc 2 gate-source charge qgs 2 nc 2 gate-drain charge qgd 3 nc 2 turn - on delay time td(on) vgs=4.5v, vds=10v, id1a rgen=6 8 16 ns 2 turn - on rise time tr 8 16 ns 2 turn - off delay time td(off) 24 38 ns 2 turn - off fall time tf 8 16 ns 2 body diode reverse recovery time trr if = 5a, dl/dt=100a/ s 15.5 ns body diode reverse recovery charge qrr 7.9 nc note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. ta=25 c dual n-channel mosfet 4 -
3 typical electrical and thermal characteristics ELM34812AA-N 4 - dual n-channel mosfet 3 may - 19 - 2005 dual n - ch annel enhancement mode field effect transistor p2 002i v g sop - 8 lead - free niko - sem -55 c 25 c gs v = 0v 10 1 0.1 0.01 0.001 1.2 0.2 a t = 125 c body diode forward voltage variation with source current and temperature 1.0 0.8 0.6 0.4 0 0.0001 100 is , reverse drain current(a) sd v , body diode forward voltage (v)
4 ELM34812AA-N dual n-channel mosfet 4 - 4 may - 19 - 2005 dual n - ch annel enhancement mode field effect transistor p2 002i v g sop - 8 lead - free niko - sem
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